The Samsung Galaxy S23s are expected to be announced soon. © The Digital
128 or 256 GB? If you’re looking to buy Samsung’s newest flagship in the next few weeks, you might want to pay attention to its internal memory. According to information fromIce Universe“, a regular leaker relayed by EngadgetSamsung could unveil a Galaxy S23 with a slower internal flash memory than its big brothers.
UFS 3.1 in 128 GB?
The 128 GB version of the Galaxy S23 could thus use a less efficient internal memory in terms of writing and reading speed. A direct consequence of using a UFS 3.1 chip rather than the latest 4.0 version. To obtain faster memory, customers will have to upgrade to a 256 GB model. According to Ice Universe, the Korean manufacturer does not yet produce a 128 GB UFS 4.0 chip.
Only the company Kioxia, specialized in the production of flash memory, would have a latest generation UFS chip in 128 GB. A technology similar to that of Samsung, but with lower performance than the chip developed by the giant of Suwon (South Korea). A competing standard that Samsung would therefore have chosen to discard for the design of its classic model.
However, according to Engadgetthe latest revelations fromIce Universe are not 100% sure, a previous leak reporting a generalization of the 256 GB on all Galaxy S23 models.
UFS 4.0 doubles the performance
Faster, more efficient, UFS 4.0 was announced in May 2022 by Samsung. With the growing increase in internet speed, the ongoing deployment of 5G and the upcoming arrival of VR / AR applications, the manufacturer wanted to renew its technology. UFS 4.0 would thus offer speeds of up to 23.2 gigabits per second (Gbps), which is double that of UFS 3.1.
At the same time, next-generation internal memory would maximize energy efficiency. A significant reduction in the energy required to read or copy data on your smartphone without penalizing the general autonomy of the phone. “This will allow smartphones to be used longer with the same battery capacity“, traffic Samsung.
